Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. That is MRAM retains its memory even after removing power from the device. Such a non-volatile memory has important military applications for missiles and satellites. Clearly such a device could also have important commercial applications if the non-volatility were accomplished without impacting other properties of the memory, notably density, read and write speed, and lifetime. IBM in cooperation with Infineon is promising to launch this new technology ,that will eliminate the boot-up process of a computer and thus enable it to turn on as instantly as a television or radio, using memory cells based on magnetic tunnel junctions.This paper discusses the following aspects in detail: Attractions of this new technology How MRAM works MRAM Architecture.Magnetic Tunnel Junctions – future of MRAM Challenges faced Anticipated Applications.
Originating from IBM’s pioneering development of a miniature component called the “magnetic tunnel junction” as long ago as 1974, MRAM uses a magnetic charge – similar to a hard drive’s – to store information, as opposed to the electric charge of existing memory forms. The chips work by storing the ones and zeros that compose digital data in a magnetic material that is sandwiched between two metal layers.
Its proponents claim the new technology combines the best virtues of many of the common forms of memory – the low cost and high capacity of dynamic RAM; the high speed of static RAM; and the permanence of Flash memory – and has the potential to significantly improve many electronic products by storing more information, accessing it faster and using less battery power than conventional electronic memory.